| PART |
Description |
Maker |
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 30LJQ045 |
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 30SLJQ045 30SLJQ045-15 |
SCHOTTKY RECTIFIER
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
|
International Rectifier
|
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| FMC6G30US60 |
Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| DTD743ZE DTD743ZM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD723YE09 DTD723YM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
